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  1. 34 Acta Physica Polonica A

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  1. 34 Domagała J.

  2. 13 Bąk-Misiuk J.

  3. 8 Paszkowicz W.

  4. 6 Dynowska E.

  5. 6 Leszczyński M.

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1
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Grazing Incidence X-Ray Reflectivity Study of MBE-Grown Co/Cu Multilayers

100%
Pełka J. B., Baczewski L. T., Wawro A., Domagała J.
Acta Physica Polonica A
|
1997
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vol. 91
|
issue 5
859-863
EN
In this work we report preliminary grazing-incidence X-ray reflectometry studies of multilayer structures composed of 3d metals Co and Cu deposited in the ultra-high vacuum molecular beam epitaxy system. The multilayers of different modulation period were deposited on glass substrate directly, or on 3d -metallic buffers of various thicknesses. The experimental specular reflectivity spectra were analyzed by a comparison with a theoretical model calculated from a recursive algorithm based on the Fresnel formula [1, 2]. It enabled us to estimate the structural parameters concerning layer thickness and roughness. The results obtained are correlated with magnetization measurements of the layered structures, as a function of modulation period, buffer type and thickness. A special attention to influence of interfacial roughness on magnetization results is paid.
2
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Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers

100%
Wierzbicka A., Lübbert D., Domagała J., Zytkiewicz Z.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
976-978
EN
X-ray rocking curve imaging technique was used to study crystallographic perfection of laterally overgrown epitaxial structures. We focus on rocking curve imaging studies of Si-doped GaAs and GaSb laterally overgrown layers grown by liquid phase epitaxy on SiO_{2} masked GaAs and GaSb/GaAs substrates, respectively. High spatial resolution offered by rocking curve imaging technique allows studying the effect of laterally overgrown epitaxial wing tilt towards the mask. Distribution of tilt magnitude over the area of laterally overgrown epitaxial stripes is easily determined. In heteroepitaxial GaSb/GaAs laterally overgrown epitaxial structures local mosaicity in the wing area was detected. Since individual grains are clearly visible on rocking curve imaging maps, their size and relative misorientation can be determined.
3
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Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors

100%
Bąk-Misiuk J., Paszkowicz W., Domagała J.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
681-684
EN
An application of X-ray quasi-forbidden reflection method of composition determination for A^{II}B^{VI} pseudobinary compounds is discussed. Three typical cases of the intensity dependence on the composition, as well as the choice of the most suitable reflection are presented.
4
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Oscillations in Reflectivity of Samples with X-ray Waveguide Layers

88%
Pełka J., Lagomarsino S., Di Fonzo S., Jark W., Domagała J.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
323-328
EN
The glancing-angle reflectivity profiles in samples containing an X-ray waveguide layer are studied. Oscillations observed at angles within the region of resonance and above, are interpreted by angle dependent interference of the monochromatic X-ray beam in thin layer. The discussion is extended to the structures composed of more than one layer. Experimental reflectivity spectra recorded with Cu K_{α} radiation are compared with the theoretical calculations. It leads to the model of oscillations in reflectivity consistent both for the resonant and non-resonant regions, and clarifies interpretation of oscillations in the region above the resonances. A brief discussion of potential applications of the reflectivity spectra to the studies of structure of thin layers is done.
5
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Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

88%
Żytkiewicz Z. R., Domagała J., Bąk-Misiuk J., Dobosz D., Leszczyński M.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
1092-1096
EN
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
6
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Lattice Constant of Doped Semiconductor

88%
Leszczyński M., Litwin-Staszewska E., Suski T., Bąk-Misiuk J., Domagała J.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
837-840
EN
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
7
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Composition Determination of Some A^{II}B^{VI} Ternary Semiconductors from Quasi-Forbidden Reflection Intensity

88%
Bąk-Misiuk J., Domagała J., Dynowska E., Miotkowska S., Paszkowicz W.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
575-578
EN
The aim of the present paper is to study the possibility of application of the X-ray quasi-forbidden reflection method to the composition determination of the sphalerite-type Cd_{1-x}M_{x}Te = Mg, Zn, Mn) single crystals. The method is based on the property of quasi-forbidden reflections that their integral intensity is very sensitive to composition and weakly sensitive to crystal lattice defects. An example of application for a Cd_{1-x}Mn_{x}Te single crystal is presented.
8
Publication available in full text mode
Content available

Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods

88%
Żymierska D., Auleytner J., Domagała J., Kobiela T., Duś R.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
289-294
EN
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films.
9
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Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods

88%
Żymierska D., Auleytner J., Domagała J., Szewczyk A., Dmitruk N.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 5
1025-1030
EN
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
10
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Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods

88%
Pełka J. B., Górecka J., Auleytner J., Domagała J., Bąk-Misiuk J.
|
EN
The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10^{16} I cm^{-2} of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
11
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Content available

Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

76%
Sadowski J., Mathieu R., Svedlindh P., Kanski J., Karlsteen M., Świątek K., Domagała J.
|
|
issue 4-5
687-694
EN
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12Å or 24Å). The non-magnetic InGaAs spacer layers are 12Å thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
12
Content available remote

MBE Growth and Properties of GaMnAs(100) Films

76%
Sadowski J., Domagała J., Bąk- Misiuk J., Świątek K., Kanski J., Ilver L., Oscarsson H.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
509-513
EN
We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
13
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Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

76%
Sadowski J., Grodzicka E., Dynowska E., Adamczewska J., Domagała J., Przedpelski W.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
967-970
EN
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF_{2}(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10^{19} cm^{-3} to 10^{2 1} cm^{-3} depending on the MBE process parameters.
14
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X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face

76%
Auleytner J., Domagała J., Gołacki Z., Pawłowska M., Pełka J., Regiński K.
Acta Physica Polonica A
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1993
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vol. 83
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issue 6
759-768
EN
Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.
15
Content available remote

Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Trela J., Leszczyński M., Misiuk A., Hartwig J., Prieur E.
Acta Physica Polonica A
|
1996
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vol. 89
|
issue 3
405-409
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
16
Content available remote

Structure and Magnetism of MBE-Grown Co/Cu Multilayers

76%
Baczewski L. T., Wawro A., Domagała J., Pełka J., Szewczyk A., Nabiałek A.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 2
315-319
EN
Structural and magnetic properties of Co/Cu multilayers deposited in the ultra-high vacuum molecular beam epitaxy system on glass substrates with different modulations periods were investigated. A structural characterization was performed by means of RHEED and Auger spectroscopy (in situ), small angle X-ray reflectivity and scanning tunneling microscopy. The samples obtained have a textured, polycrystalline layered structure for deposition at room temperature. Magnetization and in-plane magnetoresistance measurements were performed as a function of Cu and Co layer thicknesses. An influence of different buffers and of interface quality on magnetic properties was investigated.
17
Content available remote

Changes of GaP: N Defect Structure under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Kozankiewicz B., Misiuk A., Adamczewska J., Skibska M.
Acta Physica Polonica A
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1993
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vol. 83
|
issue 1
87-93
EN
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
18
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Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

76%
Szuszkiewicz W., Gębicki W., Bąk-Misiuk J., Domagała J., Leszczyński M., Hartwig J.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 5
1003-1007
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
19
Content available remote

MBE Growth and Characterization of Cubic MnTe(111) on BaF_{2} Substrates

76%
Janik E., Wojtowicz T., Dynowska E., Bąk-Misiuk J., Domagała J., Karczewski G., Kossut J.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
982-984
EN
We report on growth by molecular beam epitaxy of cubic MnTe(111) layers on BaF_{2} (111) substrates. Layers as thick as 0.2-1.0 μm were grown. Basic characterization by X-ray diffraction shows that the cubic crystal structure is deformed to orthorhombic symmetry.
20
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Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

76%
Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
987-991
EN
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
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