Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A_{3}B_{5} semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
The theoretical analysis of optical properties change in cubic crystals caused by simultaneous action of longitudinal and shear strains due to the photo-elastic interaction has been performed. The polarization characteristics change of a primary linear polarized light wave during propagation in the crystal has been studied. Results of the calculations were used to analyze photo-elastic phenomena in stressed heterostructures at the introduction of an alternating shear strain. The comparison of photo-elastic and acousto-electron phenomena in the laser heterostructures has been fulfilled. The results have been confirmed by the experiments in the InGaAs/GaAs structures at the action of shear strains excited by the ultrasonic waves.
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