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Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides

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Aleshkin V., Afonenko A., Biryukov A., Gavrilenko V., Dubinov A., Kocharovsky V., Morozov S., Maremynin K., Nekorkin S., Zvonkov B., Zvonkov N.

Acta Physica Polonica A

2005

vol. 107

issue 1

7-13

A possibility of parametric generation of middle and far infrared radiation due to the lattice nonlinearity in semiconductor laser diode and waveguide is discussed. Three possible waveguide constructions for effective generation are considered. The parametric generation method is shown to provide generation power of the order of milliwatt for middle infrared radiation and of tens of microwatt for far infrared radiation using modern quantum well laser diodes.

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1 Acta Physica Polonica A

1 2005

1 Afonenko A.

1 Aleshkin V.

1 Biryukov A.

1 Dubinov A.

1 Gavrilenko V.

1 Kocharovsky V.

1 Maremynin K.

1 Morozov S.

1 Nekorkin S.

1 Zvonkov B.

1 Zvonkov N.

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Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides