Search results

Sort By:

Limit search:

Characterization of ZnO Films Grown at Low Temperature

100%

Przeździecka E., Krajewski T., Wójcik-Głodowska A., Yatsunenko S., Łusakowska E., Paszkowicz W., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M.

Acta Physica Polonica A

2008

vol. 114

issue 5

1303-1310

ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

81%

Łukasiewicz M., Wójcik-Głodowska A., Guziewicz E., Jakieła R., Krajewski T., Łusakowska E., Paszkowicz W., Minikayev R., Kiecana M., Sawicki M., Godlewski M., Wachnicki Ł., Szczepanik A.

Acta Physica Polonica A

2008

vol. 114

issue 5

1235-1240

In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T_s=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.

Refine search results

2 Acta Physica Polonica A

2 2008

2 Godlewski M.

2 Guziewicz E.

2 Krajewski T.

2 Paszkowicz W.

2 Szczepanik A.

2 Wachnicki Ł.

2 Wójcik-Głodowska A.

2 Łusakowska E.

1 Jakieła R.

1 Kiecana M.

1 Minikayev R.

1 Przeździecka E.

1 Sawicki M.

1 Yatsunenko S.

1 Łukasiewicz M.

Search results

Characterization of ZnO Films Grown at Low Temperature

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors