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Optical Absorption in Periodic InN:In Structures

100%

Plotnikov D., Shubina T., Jmerik V., Semenov A., Ivanov S.

Acta Physica Polonica A

2007

vol. 112

issue 2

191-196

Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

86%

Mizerov A., Jmerik V., Kaibyshev V., Komissarova T., Masalov S., Sitnikova A., Ivanov S.

Acta Physica Polonica A

2008

vol. 114

issue 5

1253-1258

The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature T_S ≈ 760°C and Ga to activated nitrogen flux ratio F_Ga/F_N* ≈ 1.8.

AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

73%

Shevchenko E., Toropov A., Nechaev D., Jmerik V., Shubina T., Ivanov S., Yagovkina M., Pozina G., Bergman J., Monemar B.

vol. 126

issue 5

1140-1142

We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick Al_{x}Ga_{1-x}N/Al_{x+0.1}Ga_{0.9-x}N quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.

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3 Acta Physica Polonica A

1 2014

1 2008

1 2007

3 Ivanov S.

3 Jmerik V.

2 Shubina T.

1 Bergman J.

1 Kaibyshev V.

1 Komissarova T.

1 Masalov S.

1 Mizerov A.

1 Monemar B.

1 Nechaev D.

1 Plotnikov D.

1 Pozina G.

1 Semenov A.

1 Shevchenko E.

1 Sitnikova A.

1 Toropov A.

1 Yagovkina M.

Search results

Optical Absorption in Periodic InN:In Structures

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency