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Conductivity Near the Metal-to-Insulator Transition in Cd_{1-x}Mn_{x}Se:Sc

100%
Głód P., Sawicki M., Lenard A., Dietl T., Plesiewicz W.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
389-392
EN
Earlier studies of transition metal impurities in II-VI compounds suggest that Sc acts as a resonant donor. We performed Hall effect and conductivity measurements of CdSe:Sc and Cd_{0.95}Mn_{0.05}Se:Sc. The results, particularly the critical concentration of the metal-to-insulator transition, turned out to be similar to those obtained previously for Cd_{1-x}Mn_{x}Se doped with hydrogenic-like impurities, such as In and Ga. Therefore, if the ground state of Sc impurity is indeed located above the bottom of the conduction band, our data demonstrate that the metal-to-insulator transition is primarily driven by the scattering, i.e. it corresponds to the Anderson localization.
2
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Light-Controlled Transport in Doped Diluted Magnetic Semiconductors near Localization Boundary

100%
Głód P., Dietl T., Wojtowicz T., Sawicki M., Miotkowski I.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
657-660
EN
We report milikelvin studies of light induced metastable changes of the conductivity of the In doped Cd_{0.95}Mn_{0.05}Te_{0.97}Se_{0.03} crystals in the vicinity of the metal-insulator transition.
3
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Influence of Bound Magnetic Polarons on Magnetic and Electrical Properties in Metallic n-Cd_{0.95}Mn_{0.05}Se

86%
Głód P., Sawicki M., Dietl T., Skośkiewicz T., Lenard A., Plesiewicz W.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
173-175
EN
Doping-induced contribution to the millikelvin magnetic susceptibility of Cd_{0.95}Mn_{0.05}Se:In has been found to undergo a maximum at n ≈ 2n_{c}, and to vanish for n ≥ 8n_{c}, where n_{c} is the electron concentration corre­sponding to the metal-insulator transition. This confirms the presence, also in the metallic phase, of bound magnetic polarons. Their slow dynamics may account for hysteresis visible in our magnetoresistance data.
4
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Electron Localization in Sb-Doped Si/SiGe Superlattices

73%
Dietl T., Jaroszyński J., Sawicki M., Głód P., Wróbel J., Stöger G., Brunthaler G., Bauer G., Schäffler F.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
699-702
EN
Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D_{∥}/D_{⊥} ≈ 10^{3} the system behaves as 3D in respect of localization by disorder.
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