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Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

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Żytkiewicz Z., Dobaczewski L., Gomez D., Briones F.
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We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH_{4})_{2}S_{x} solution. The results are discussed in terms of a photoinduced process of the As_{Ga} antisite generation on the sulfurized surface of GaAs.
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