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1
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ELS Study of Ultra Thin Al Layers Deposited on the Mo(110) Face

100%
Kołaczkiewicz J., Zuber S.
Acta Physica Polonica A
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1992
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vol. 81
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issue 2
257-263
EN
Influence of Al concentration on the energy loss spectrum of the substrate was observed. Also the dependences of the loss amplitude and energy on the primary energy and the layer thickness were studied.
2
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Nucleation and Crystal Growth of Cu on Ir Tips Under Ultra-High Vacuum and in the Presence of Oxygen

100%
Zuber S., Ciszewski A.
Acta Physica Polonica A
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2000
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vol. 97
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issue 4
681-692
EN
Results concerning the morphology of Cu adsorption layers deposited from vapor under ultrahigh vacuum on Ir tip and the influence of oxygen on this morphology are reported. The method employed was field electron emission microscopy. It was found that the presence of oxygen decreases the copper wettability of iridium. Preadsorption of oxygen on the Ir surface is followed by an increase in cohesion interaction between atoms of the Cu deposited onto the tip at room temperature. Coadsorption of Cu and O on the Ir tip surface at liquid nitrogen temperature, when followed by gradually heating the adlayer, results in crystallization of the deposit in the temperature range from 430 K to about 700 K. Some evidence indicates the formation of Cu_{2}O with a high degree of crystallinity under these conditions. Cu and O coadsorption on the Ir surface at a temperature higher than 1090 K leads to selective accumulation of Cu on the {111} faces and to formation of epitaxial crystals which are oriented to the substrate in the same manner as the Cu crystals grown at ultra-high vacuum from Cu flux containing no oxygen. Oxygen incorporated into the Cu beam interact preferentially with {011} and {001} Ir faces, where it can produce oxide layers.
3
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Reconstruction of Tungsten (111) and (211) Surfaces Induced by Carbon and Oxygen

81%
Szczudlo Z., Zuber S., Szczepkowicz A., Ciszewski A.
Acta Physica Polonica A
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2002
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vol. 102
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issue 6
781-784
EN
Scanning tunneling microscopy is used to obtain images of reconstructed W(111) and W(211) surfaces. The reconstruction is induced by submonolayer coverages of carbon and oxygen.
4
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AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)

81%
Mazur P., Zuber S., Grodzicki M., Ciszewski A.
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vol. 126
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issue 5
1131-1133
EN
Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
5
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PTCDI-C8 Adsorption on Si(100)

81%
Lament K., Mazur P., Zuber S., Ciszewski A.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
775-776
EN
Adsorption of N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) on the Si(100) surface has been examined using X-ray photoelectron spectroscopy and scanning tunneling microscopy. X-ray photoelectron spectroscopy results show that the bonds are formed between the carbonyl groups of the molecules and the substrate. Scanning tunneling microscopy results show that the first and further layers are disordered.
6
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Sb Layers on p-GaN: UPS, XPS and LEED Study

71%
Grodzicki M., Mazur P., Pers J., Zuber S., Ciszewski A.
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vol. 126
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issue 5
1128-1130
EN
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
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