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Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

100%
Datsenko L. I., Misiuk A., Härtwig J., Briginets A., Khrupa V. I.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
585-590
EN
The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
2
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Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

86%
Misiuk A., Adamczewska J., Bąk-Misiuk J., Härtwig J., Morawski A., Witczak Z.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
317-320
EN
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
3
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Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

86%
Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
987-991
EN
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
4
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Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

86%
Datsenko L., Khrupa V., Krasulya S., Misiuk A., Härtwig J., Surma B.
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EN
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
5
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X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

73%
Paszkowicz W., Górecka J., Domagała J., Dmitruk N., Varshava S. S., Härtwig J., Ohler M., Pietraszko A.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
997-1002
EN
GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.
6
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Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

73%
Bąk-Misiuk J., Domagała J., Paszkowicz W., Trela J., Żytkiewicz Z. R., Leszczyński M., Regiński K., Muszalski J., Härtwig J., Ohler M.
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EN
The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
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