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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

100%

Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

325-328

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector

84%

Hackiewicz K., Martyniuk P., Rutkowski J., Kowalewski A.

Acta Physica Polonica A

2017

vol. 132

issue 4

1415-1419

In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.

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2 Acta Physica Polonica A

2 2017

2 Martyniuk P.

1 Benyahia D.

1 Boguski J.

1 Hackiewicz K.

1 Ivaldi F.

1 Kowalewski A.

1 Kubiszyn Ł.

1 Kębłowski A.

1 Michalczewski K.

1 Piotrowski J.

1 Rogalski A.

1 Rutkowski J.

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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector