In this communication the effect of impurity quenching of the photoluminescence of ZnS crystals is discussed. An appropriate mechanism of non- radiative recombination is proposed and its efficiency is estimated.
N-type indium doped CdTe grown on n^{+}-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
The paper reports on the application of SQUID magnetometry to probe magnetic ion distribution in epilayers and at interfaces of diluted magnetic semiconductors. We present also new results on the possible influence of the magnetic confinement on the formation of the spin-glass phase, and on antiferromagnetic phase transition in zinc-blende MnTe.
We report on the growth and basic characterization of digital magnetic quantum wells, that is, quantum wells in which the well material is itself a short period superlattice composed of alternating diluted magnetic and nonmagnetic semiconductor layers each only a few monolayers thick. These novel structures can be useful in a variety of studies, including studies of barrier-well interface sharpness.
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