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1
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Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment

100%
Fedotov A., Korolik O., Mazanik A., Kołtunowicz T., Żukowski P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
108-110
EN
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
2
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Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

100%
Frantskevich N., Mazanik A., Frantskevich A., Kołtunowicz T., Żukowski P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
105-107
EN
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
3
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Mechanisms of Carrier Transport in Cu_x(SiO₂)_{1-x} Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

86%
Fedotov A., Mazanik A., Svito I., Saad A., Fedotova V., Czarnacka K., Koltunowicz T.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
883-886
EN
The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cu_x(SiO₂)_{1-x} nanocomposite films around the percolation threshold x_{C} in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold x_{C} ≈ 0.59 and nearly metallic behaviour beyond the x_{C}. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < x_{C} exhibited behavior close to ReZ(f) ≈ f^{-s} with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > x_{C}), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
4
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Thermoelectric Properties of Ca_3Co_4O_9-Based Ceramics Doped with Fe and/or Y

73%
Fedotov A., Fedotov A., Mazanik A., Svito I., Saad A., Troyanchuk I., Bushinski M., Fedotova V., Zukowski P., Koltunowicz T.
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vol. 125
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issue 6
1344-1347
EN
We describe here structure and temperature dependences of conductivity σ(T), the Seebeck coefficient α(T), thermal conductivity λ(T) and figure-of-merit ZT(T) in Ca_3Co_4O_9 ceramics, doped with Fe and Y, depending on compacting pressure (0.2 or 6 MPa) and temperature (300 < T < 700 K). It is shown that introduction of iron and yttrium to ceramics does not alter the crystalline structure of the material. Increasing the pressure in the compacting process before the additional diffusion annealing leads to a smaller-grained structure and increase σ and λ due to reducing of the synthesized samples porosity. The Seebeck coefficients of nanocomposite ceramics Ca_3Co_{3.9}Fe_{0.1}O_9 and (Ca_{2.9}Y_{0.1})(Co_{3.9}Fe_{0.1})O_9 have linear dependences on temperature is not changed after increase of compacting pressure. Electrical-to-heat conductivity ratio (σ/λ) for the samples compacted at high (6 GPa) pressure increases not more than 20-30% in comparison with ones compacted at low (0.2 GPa) pressure, whereby ZT is increased more than 50%. The main reason for this effect is samples porosity reduction with the compacting pressure increase.
5
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Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

73%
Fedotova J., Ivanou D., Mazanik A., Svito I., Streltsov E., Saad A., Zukowski P., Fedotov A., Bury P., Apel P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
894-896
EN
In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.
6
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Magnetoresistance in n-Si/SiO_2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

59%
Fedotova J., Ivanou D., Ivanova Y., Fedotov A., Mazanik A., Svito I., Streltsov E., Saad A., Tyutyunnikov S., Kołtunowicz T., Demyanov S., Fedotova V.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
133-135
EN
A study of magnetotransport in the n-Si/SiO_2/Ni nanostructures with granular Ni nanorods in SiO_2 pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/SiO_2/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
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