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Giant Magnetoresistance in Permalloy/Copper Multilayers

100%
EN
The oscillatory behaviour of the giant magnetoresistivity versus Cu sublayer thickness was observed in Ni_{83}Fe_{17}/Cu multilayers with an oscillation period of 1 nm independently of buffer layer and substrates used in the experiment. The giant magnetoresistance field sensitivity equal to 0.02%/Oe and 0.15%/Oe for the first and the second maximum respectively, were found. It was shown that the giant magnetoresistance effect in our multilayers is not only due to the antiferromagnetic coupling between adjacent permalloy layers but also due to the superparamagnetic-like behaviour related to the existence of the intermixed interfacial areas.
EN
The resistivity (ρ) and temperature coefficient of resistivity (TCR) dependencies on modulation wavelength (λ) were examined in Fe/Zr multi-layer thin films. It was shown that the ρ(λ) and TCR(λ) behaviours can be explained on the basis of the assumption that the amorphous phase can be spontaneously formed during the deposition process. We found that the effective thickness of the amorphous phase was ≈2 nm per single interface.
EN
A direct comparison between the Hall effects and giant magnetoresistance of ferromagnetic multilayers of similar composition (Ni_{80}Fe_{20}/Au/Co/Au)_N with alternating in-plane and out-of-plane magnetization direction of Co layers is presented. The characteristic features at magnetic field-dependence of giant magnetoresistance were correlated with the creation and annihilation of the stripe domains in Co layer, with perpendicular anisotropy. The nucleation field values were investigated as an Au layer thickness function. Furthermore, the in situ conductance measurement results characterised the island growth mode of the ferromagnetic layers. The percolation thicknesses were also indicated.
EN
The as-deposited and annealed Co/Ag discontinuous multilayer-like structures were examined. Discontinuous Co sublayers are thought to consist of fine superparamagnetic and ferromagnetic grains. Using the bimodal superparamagnetic grain sizes distribution the GMR(H) dependencies were successfully modelled with the use of two Langevin functions simulating the magnetization of the superparamagnetic grains.
EN
A correlation between the growth process and electrical properties of [Ni_{80}Fe_{20}(2 nm)/Au(2 nm)/Co(0.8 nm)/Au(2 nm)]_{15} multilayers is presented. A set of multilayers of identical composition was deposited in different temperatures. The changes in giant magnetoresistance amplitude were correlated with the changes in Co layers growth process that occur in different temperatures. The in situ conductance measurement leads to the growth mechanism identification in high temperatures as formation of Co islands. Intensified islandisation of Co was eventually confirmed by the temperature changes in shape of the Hall voltage loops, and the evolution of Co layers contribution.
EN
In this contribution the in situ conductance vs. deposition time dependences of Fe/Si multilayers are analysed. The plot of resistance multiplied by the square of the thickness as a function of iron thickness shows that during the iron deposition initially amorphous-like Fe-Si mixture is formed, next the mixture crystallises, and finally bcc-Fe phase appears. The interface mixing is also manifested by the reduction of the total multilayer thickness measured by small angle X-ray diffraction.
EN
The correlation between magnetostatic or Néel's coupling and roughness of interfaces in sputtered Cu/Py/V/Py/MnIr/Cu multilayers was investigated with the help of atomic force microscopy and magnetometry. It is shown that the coupling strongly depends on the roughness of seed Cu layer which in turn depends on sputtering power. Roughness levels off after deposition of consecutive layers to about 0.2 nm rms.
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Annealing Effect of Equiatomic Co/Pt Alloy Films

71%
EN
Polycrystalline as-sputtered CoPt alloy films near the equiatomic composition were characterized as consisting of a disordered fcc phase with preferred texture along [111] orientation perpendicular to the film plane. The film annealing at 600°C/16 h induces the disorder-order phase transition confirmed by X-ray diffraction. As a result of the transition an appearance of the ordered tetragonal (fct) phase of AuCuI type with c/a = 0.974 is observed. The c-axis is the easy axis of magnetization. Both longitudinal and polar Kerr hysteresis loops reveal a dramatic increase in the coercivity from 0.1 to 4.5 kOe in annealed CoPt alloy films due to ordering.
EN
In the following we present the role of surface scattering at Au/Co and Au/Ni-Fe interfaces in Ni-Fe/Au/Co/Au multilayers deposited in different temperatures. Specularity parameter, which describes the electron scattering, is calculated from fitting in situ collected conductance data with the Fuchs-Namba-Tesanovic model. Application of the parallel resistors model enabled to depict changes between Au/Co and Au/Ni-Fe interfaces within multilayers for each repetition. The correlation between enhanced grain boundary scattering for higher deposition temperatures and surface roughness of Ni-Fe/Au/Co/Au multilayers is found.
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In Situ Conductance of Fe/Si and Fe/Ge Multilayers

71%
EN
In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
EN
We report structural and magnetic properties of Ni_{83}Fe_{17}/Cu multilayer films with various buffer layer and sublayer thicknesses of copper d_{Cu} and Permalloy d_{Py} deposited by face-to-face sputtering. The following features prove a good quality of our films: a well-layered structure, complete antiferromagnetic coupling with a low coupling strength (2×10^{-5} J/m^{2} for d_{Cu}=1 nm and 10^{-6} J/m^{^2} for d_{Cu}=2.1 nm) and a low coercive field which make them attractive for possible applications as giant magnetoresistance sensors.
EN
An advanced deposition technique known as glancing angle deposition was used to fabricate randomly seeded magnetic cobalt columnar nanostructures. The existence of nanocolumns was confirmed by the cross-section scanning electron microscopy. The evolution in the magnetization reversal mechanism as a function of the film thickness was investigated. The coercivity H_{C} and M_{R}/M_{S} ratio (where M_{R} and M_{S} denote the remanent and saturation magnetization, respectively), derived from the magnetic hysteresis loops, are discussed as a function of the angle between the external magnetic field and the surface normal. The direction of the magnetization easy/hard axis and the columns inclination angle were determined on the basis of the angular dependences of the H_{C} and the M_{R}/M_{S}. A crossover from the coherent rotation, based on the Stoner-Wohlfarth model, to the curling reversal mode was observed.
EN
The influence of temperature and annealing on giant magnetoresistance of Si(100)/Cu(20 nm)/Py(2 nm)/(Cu(2 nm)/Py(2 nm))_{100} multilayer (Py = Ni_{83}Fe_{17}) sputtered at room temperature in double face-to-face configuration is reported. It was found that giant magnetoresistance value, ΔR_{GMR}/R_{sat} (where R_{sat} is the resistance in saturation), monotonically decreases with increasing temperature (4.5% at 173 K to about 1% at 373 K). This results from the decrease in magnetic change of resistance, ΔR_{GMR}, and to the lesser extent from an increase in R_{sat}, though both of them are caused by the shortening of electrons mean free path. The observed almost linear decrease in giant magnetoresistance saturation field with increasing temperature is explained by temperature changes of magnetization profile. Vibrating sample magnetometer measurements revealed that the increase in temperature results in pronounced decrease in remnant to saturation magnetization ratio (M_{r}/M_{s}) suggesting that at low temperatures magnetic bridges between Py layers play an important role in magnetization process. It is shown that proper annealing, by an annihilation of bridges and/or lateral decoupling, leads to an increase in giant magnetoresistance ratio from 3.4% in as deposited state to 4.7%.
EN
Structures containing magnetic metallic layers attract a lot of attention because of their possible applications in the area of spintronics. The hybrid structures compatible with the Si crystal lattice parameter are of special interest. In this work the short-period Fe/Si multilayers were grown by the sputtering onto (001)-oriented Si substrate and investigated by various techniques. After the deposition, all multilayers were characterized by atomic force microscopy. The goal of the present paper was to determine the chemical composition of thin layer created at the interface in Fe/Si multilayers due to the Fe diffusion into Si, as well as to analyze the phenomena, which take place in this area. The results of the optical characterization by the Raman scattering were correlated with the magnetic properties of investigated structures (determined by means of the Kerr rotation).
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