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1

Infrared Detectors for the Future

100%

Rogalski A.

Acta Physica Polonica A

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2009

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vol. 116

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issue 3

389-406

EN

In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO_x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

2

Detection of optical radiation

64%

Rogalski A., Bielecki Z.

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issue 1

3

Infrared Devices And Techniques (Revision)

64%

Rogalski A., Chrzanowski K.

Metrology and Measurement Systems

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2014

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issue 4

4

Insight into performance of quantum dot infrared photodetectors

64%

Martyniuk P., Rogalski A.

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2009

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vol. 57

|

issue 1

5

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

64%

Martyniuk P., Rogalski A.

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2013

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issue 1

6

Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes

51%

Jóźwikowski K., Kopytko M., Rogalski A.

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2010

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issue 4

7

Doing Hirsch proud; shaping H-index in engineering sciences

51%

Czarnecki L., Kaźmierkowski M. P., Rogalski A.

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2013

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issue 1

8

Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

46%

Rogalski A., Kopytko M., Martyniuk P., Hu W., Rogalski A., Kopytko M., Martyniuk P., Hu W.

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2020

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issue 4

9

Modeling of HgCdTe LWIR detector for high operation temperature conditions

45%

Gawron W., Martyniuk P., Madejczyk P., Rogalski A., Piotrowski J.

Metrology and Measurement Systems

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2013

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issue 2

10

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

39%

Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

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2017

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vol. 132

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issue 2

322-324

EN

Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.

11

Surface smoothness improvement of HgCdTe layers grown by MOCVD

39%

Gawron W., Madejczyk P., Kłos K., Rutkowski J., Piotrowski A., Rogalski A., Mróz W.

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2009

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vol. 57

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issue 2

12

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

39%

Madejczyk P., Gawron W., Piotrowski A., Kłos K., Rutkowski J., Rogalski A.

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issue 6

1199-1204

EN

One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P^{+}-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH_3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH_3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R_0A product of HgCdTe photodiodes in temperatures close to 230 K.

13

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

33%

Gomółka E., Rutkowski J., Martyniuk P., Markowska O., Kopytko M., Kowalewski A., Rogalski A., Motyka M., Krishna S.

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2018

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issue 3

14

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

33%

Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

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2017

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vol. 132

|

issue 2

325-328

EN

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

15

Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors

33%

Piotrowski A., Madejczyk P., Gawron W., Kłos K., Pawluczyk J., Grudzień M., Piotrowski J., Rogalski A.

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2005

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vol. 53

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issue 2

Refine search results

Infrared Detectors for the Future

Detection of optical radiation

Infrared Devices And Techniques (Revision)

Insight into performance of quantum dot infrared photodetectors

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes

Doing Hirsch proud; shaping H-index in engineering sciences

Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

Modeling of HgCdTe LWIR detector for high operation temperature conditions

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

Surface smoothness improvement of HgCdTe layers grown by MOCVD

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors