Search results

1

Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

100%

Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.

Acta Physica Polonica A

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2002

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vol. 101

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issue 5

719-727

EN

Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.

2

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

100%

Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.

Acta Physica Polonica A

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1997

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vol. 91

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issue 5

987-991

EN

The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.

3

Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

100%

Datsenko L., Khrupa V., Krasulya S., Misiuk A., Härtwig J., Surma B.

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EN

The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.

4

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

84%

Misiuk A., Wierzchowski W., Wieteska K., Londos C., Andrianakis A., Bak-Misiuk J., Yang D., Surma B.

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issue 2

344-347

EN

Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.

5

Spectroscopic and Laser Properties of LiNbO_{3}:Dy^{3+} Crystals

84%

Malinowski M., Myziak P., Piramidowicz R., Pracka I., Łukasiewicz T., Surma B., Kaczmarek S., Kopczyński K., Mierczyk Z.

Acta Physica Polonica A

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1996

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vol. 90

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issue 1

181-189

EN

The spectroscopic properties of trivalent dysprosium (Dy^{3+}) doped LiNbO_{3} crystals have been investigated at various temperatures. Absorption, emission, excitation and lifetime measurements have been performed and discussed in the framework of Judd-Ofelt approach. The stimulated emission cross sections of the strongest transitions of Dy ^{3+} ion have been estimated. A stimulated emission has been demonstrated in the near infrared.

6

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

68%

Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.

Acta Physica Polonica A

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2008

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vol. 114

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issue 2

439-446

EN

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

7

Formation of Mn-Related Defect Band in InP

68%

Macieja B., Korona K., Piersa M., Witowski A., Wasik D., Wysmołek A., Strzelecka G., Hruban A., Surma B., Palczewska M., Kamińska M., Twardowski A.

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EN

Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn^{2+}(d^5) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d^5 or d^5 plus a hole localized about 7Å around corresponding Mn core.

Refine search results

Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

Spectroscopic and Laser Properties of LiNbO_{3}:Dy^{3+} Crystals

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

Formation of Mn-Related Defect Band in InP