The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
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