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  1. 40 Acta Physica Polonica A

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  1. 45 Piotrowska A.

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1
Content available remote

Ohmic Contacts to GaAs: Fundamentals and Practice

100%
Piotrowska A.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 3
491-504
EN
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The paper emphasizes the reactions at the metal/GaAs interface and the structural factors which govern its electrical behavior and long-term stability. Results on the optimization of conventional gold-based ohmic contacts together with recent achievements in the technology of non-alloyed contacts are overviewed.
2
Content available remote

Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

52%
Kamińska E., Piotrowska A., Kasjaniuk S., Gierlotka S.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
843-846
EN
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
3
Content available remote

Investigation of Phosphorus Release during Annealing of Au Contacts to InP

52%
Piotrowska A., Kamińska E., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
849-852
EN
The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
4
Content available remote

Interaction between Thin Films of Zinc and (100) GaAs

52%
Kamińska E., Piotrowska A., Żarecka R., Mizera E.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 3
527-529
EN
Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn_{3}As_{2} phase, highly oriented with respect to the (100) substrate takes place.
5
Content available remote

Gas Sensors Based on ZnO Structures

46%
Struk P., Pustelny T., Gołaszewska K., Borysiewicz M., Piotrowska A.
Acta Physica Polonica A
|
2013
|
vol. 124
|
issue 3
567-569
EN
The paper presents the results of investigations concerning sensor structures based on porous layers of zinc oxide (ZnO) sensitive to a selected gaseous environment. The investigations comprised analyses of the influence of the gaseous environment on the optical properties of a sensor structure, in particularly on the change of the spectral characteristics of optical transmission within the range of ultraviolet light and in the visible range. These presented investigations were carried out in such a gaseous environment as nitrogen dioxide NO_2 in synthetic air.
6
Content available remote

Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition

46%
Borysiewicz M., Wojciechowski T., Dynowska E., Kamińska E., Piotrowska A.
|
|
vol. 125
|
issue 5
1144-1148
EN
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
7
Content available remote

Interfacial Reactions between Thin Films of Zinc and (100)InP

46%
Kamińska E., Piotrowska A., Barcz A., Mizera E., Dynowska E.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
771-774
EN
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and trans­mission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn_{3}P_{2} phase lattice matched to InP.
8
Publication available in full text mode
Content available

Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation

46%
Łusakowski J., Knap W., Kamińska E., Piotrowska A., Gavrilenko V.
Acta Physica Polonica A
|
2003
|
vol. 103
|
issue 6
545-551
EN
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
9
Publication available in full text mode
Content available

Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors

46%
Struk P., Pustelny T., Gołaszewska K., Borysiewicz M. A., Piotrowska A.
|
2015
|
issue 4
10

Morphological and mineral characteristics of peripheral blood in female polar fox in relation to age

46%
Piotrowska A., Szymeczko R., Ozgo M., Boguslawska-Tryk M., Burlikowska K.
Folia Biologica
|
2008
|
vol. 56
|
issue 3-4
263-267
EN
The aim of the study was to determine the values of selected haematological and biochemical parameters in peripheral blood of female polar fox in relation to the age of the animals. The research involved 50 polar fox females three months after the lactation period (i.e. the non-mating period).Animalswere divided into 5 age groups (n=10), ranging from1 to 5 years of age. In blood samples the following parameters were determined: RBC, Ht, Hb, WBC, PLT, red blood cell parameters (MCV,MCH,MCHC) and the percentage of respective kinds of white blood cells in the total number of leukocytes. The content of Ca, Pi, Na, K, Cl, Mg, Fe, Cu and Zn as well as the ALP and ACP activity was determined in blood serum. In comparison with one year-old females, in peripheral blood of females fromthe remaining age groups an increase in RBC, Ht and Hb content was observed as well as a significant (P<0.05) decrease in WBC level together with a lower number of lymphocytes and an increase in the relative content of granulocytes and monocytes. No distinct relationship between the content of Ca, Na, Cl, Mg, Cu, Zn, the activity of ALP and ACP and the age of the animals was observed. The highest concentration of Pi and K was found in the blood serumof one year-old females. The content of Fe decreased
11
Content available remote

Non-Ohmic Conductivity of High Resistivity CdTe

40%
Łusakowski J., Szczytkowski J., Szadkowski K., Kamińska E., Piotrowska A., Karczewski G., Wojtowicz T.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 4
803-806
EN
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
12
Content available remote

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

40%
Kaczmarski J., Taube A., Dynowska E., Dyczewski J., Ekielski M., Kamińska E., Piotrowska A.
Acta Physica Polonica A
|
2013
|
vol. 124
|
issue 5
855-857
EN
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.
13
Content available remote

FFirst TSC and DLTS Measurements of Low Temperature GaAs

40%
Muszalski J., Babiński A., Korona K., Kamińska E., Piotrowska A., Kamińska M., Weber E.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 3
413-416
EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
14
Content available remote

Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts

40%
Kamińska E., Piotrowska A., Żarecka R., Barcz A., Mizera E., Kwiatkowski S.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
853-856
EN
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
15
Content available remote

Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP

40%
Piotrowska A., Kamińska E., Guziewicz M., Veresegyhazy R., Mojzes I., Pecz B.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 3
457-460
EN
Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
16
Content available remote

Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

40%
Borysiewicz M., Kamińska E., Piotrowska A., Pasternak I., Jakieła R., Dynowska E.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1061-1066
EN
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
17
Content available remote

Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

40%
Piotrowska A., Kamińska E., Guziewicz M., Adamczewska J., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
857-860
EN
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
18
Content available remote

Shallow Ohmic Contact System to n-GaAs

40%
Kamińska E., Piotrowska A., Piotrowski T., Barcz A., Guziewicz M., Adamczewska J., Kwiatkowski S.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
804-806
EN
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
19
Content available remote

High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

40%
Taube A., Kruszka R., Borysiewicz M., Gierałtowska S., Kamińska E., Piotrowska A.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-22-A-24
EN
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.
20
Content available remote

The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

40%
Matys M., Miczek M., Adamowicz B., Żytkiewicz Z., Kamińska E., Piotrowska A., Hashizume T.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-73-A-75
EN
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).
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