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Ohmic Contacts To GaN by Solid-Phase Regrowth

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Kamińska E., Piotrowska A., Barcz A., Ilka L., Guziewicz M., Kasjaniuk S., Dynowska E., Kwiatkowski S., Bremser M. D., Davis R. F.

Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.

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1 Acta Physica Polonica A

1 1997

1 Barcz A.

1 Bremser M. D.

1 Davis R. F.

1 Dynowska E.

1 Guziewicz M.

1 Ilka L.

1 Kamińska E.

1 Kasjaniuk S.

1 Kwiatkowski S.

1 Piotrowska A.

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Ohmic Contacts To GaN by Solid-Phase Regrowth