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InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

100%
Mrowiński P., Dusanowski Ł., Somers A., Höfling S., Reithmaier J., Misiewicz J., Sęk G.
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EN
In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.
2
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Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes

84%
Mrowiński P., Musiał A., Sęk G., Misiewicz J., Höfling S., Somers A., Hein S., Forchel A.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
801-804
EN
The influence of confinement potential anisotropy on emission properties of strongly elongated single InAs/InGaAlAs/InP quantum dashes has been investigated by polarization-resolved microphotoluminescence spectroscopy at around 1.5 μm. There have been determined the exciton fine structure splitting, degree of linear polarization of surface emission and biexciton binding energy. The investigated dashes exhibited usually: the exciton anisotropy splitting larger than 100 μeV, the corresponding biexciton binding energy of about 3 meV, and the degree of linear polarization values in the range from 24% to 55%. Here, we presented a correlation of these parameters for several quantum dashes, which can be attributed either to a change in lateral aspect ratio within the ensemble, or the carrier localization on random fluctuations of the dash confinement potential.
3
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

68%
Maryński A., Mrowiński P., Ryczko K., Podemski P., Gawarecki K., Musiał A., Misiewicz J., Quandt D., Strittmatter A., Rodt S., Reitzenstein S., Sęk G.
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EN
Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
4
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Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash

68%
Mrowiński P., Tarnowski K., Olszewski J., Somers A., Kamp M., Höfling S., Reithmaier J., Urbańczyk W., Misiewicz J., Machnikowski P., Sęk G.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-48-A-52
EN
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
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