Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

100%
Stagraczyński S., Jasiukiewicz C., Dugaev V., Berakdar J.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 2
219-221
EN
We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.
2
Content available remote

Influence of Acoustic Phonons on the Magnetic Anisotropy in GaMnAs Magnetic Semiconductors

88%
Jasiukiewicz C., Stagraczyński S., Lehmann D., Dugaev V., Berakdar J.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 2
179-181
EN
We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.
3
Content available remote

Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

76%
Wolski S., Jasiukiewicz C., Dugaev V., Barnaś J., Slobodskyy T., Hansen W.
Acta Physica Polonica A
|
2015
|
vol. 127
|
issue 2
472-474
EN
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.