Reflection high energy electron diffraction is a popular technique to characterize arrangements of atoms near a surface. However, Japanese researchers recently demonstrated experiments in the same geometry, however, conducted using positrons. In this context, detailed comparisons of basic results expected for diffractions of electrons and positrons seem to be interesting. Subsequently, in the current work the growth of single atomic layers of Ge on the Ge(001) substrate is assumed and intensities of reflected beams for electrons and positrons are computed by using dynamical diffraction theory for the case of the off-symmetry azimuth. Shapes of respective theoretical rocking curves are analyzed and then the features of intensity oscillations expected during the regular, continuous deposition of the material are discussed.
A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined shapes of the intensity oscillations for different cases of settling of atoms at surfaces of growing films.
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