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1

High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs

100%

Dmochowski J., Wang P., Stradling R.

Acta Physica Polonica A

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1991

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vol. 80

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issue 2

279-282

EN

The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.

2

Localized Spin Relaxation Due To Coupling To Effective Mass States

100%

Wilamowski Z., Dmochowski J., Jantsch W.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

1055-1058

EN

The EPR of residual Mn in CdF_{2} doped with Y, In and Ga is investigated. Although these donors are barely seen in EPR, they manifest themselves by a new effect: a drastic resonant reduction in the longitudinal relaxation rate of Mn which occurs only if the Zeeman splitting of the two subsystems coincide. In this situation, the saturation of those of the six Mn hyperfine lines is weakened which coincide with the shallow donor resonance.

3

Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

76%

Dmochowski J., Stradling R., Sly J., Dunstan D., Prins A., Adams A.

Acta Physica Polonica A

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1995

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vol. 87

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issue 2

457-460

EN

Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A_{1} transition for Sn donors in highly Sn doped n-type (≈ 10^{18} cm^{-3}) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.

4

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell

76%

Dmochowski J., Stradling R., Prins A., Dunstan D., Adams A., Kukimoto H.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

649-652

EN

The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.

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4 Acta Physica Polonica A

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1 Jantsch W.

1 Kukimoto H.

1 Sly J.

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1 Wilamowski Z.

High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs

Localized Spin Relaxation Due To Coupling To Effective Mass States

Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell