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Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

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Romanyuk V., Dmitruk N., Karpyna V., Lashkarev G., Popovych V., Dranchuk M., Pietruszka R., Godlewski M., Dovbeshko G., Timofeeva I., Kondratenko O., Taborska, M., Ievtushenko A.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-36-A-40

Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

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1 Acta Physica Polonica A

1 2016

1 Dmitruk N.

1 Dovbeshko G.

1 Dranchuk M.

1 Godlewski M.

1 Ievtushenko A.

1 Karpyna V.

1 Kondratenko O.

1 Lashkarev G.

1 Pietruszka R.

1 Popovych V.

1 Romanyuk V.

1 Taborska, M.

1 Timofeeva I.

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Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region