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1
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The magnetic field dependence of the deformation potential materials in the square well confinement potential

100%
Sug J., Lee S., Kim J.
Open Physics
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2008
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vol. 6
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issue 4
812-823
EN
We study the optical Quantum Transition Line Shapes (QTLS) which show the absorption power and the Quantum Transition Line Widths (QTLW) of electron-deformation potential phonon interacting systems. In order to analyze the quantum transition, we compare the magnetic field dependencies of the QTLWand the QTLS on two transition processes, namely the intra-Landau level transition process and the inter-Landau level transition process. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS).
2
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ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects

64%
Yim K., Jeon S., Kim M., Kim S., Nam G., Lee D., Kim J., Kim J., Leem J.
Acta Physica Polonica A
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2012
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vol. 121
|
issue 1
214-216
EN
ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
3
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Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

64%
Kim M., Yim K., Kim S., Nam G., Lee D., Kim J., Kim J., Leem J.
Acta Physica Polonica A
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2012
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vol. 121
|
issue 1
217-220
EN
Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E_{U}) was changed inversely with optical band gap of the indium-doped ZnO thin films.
4
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Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer

52%
Kim M., Jin S., Choi H., Kim G., Yim K., Kim S., Nam G., Yoon H., Kim Y., Lee D., Kim J., Kim J., Leem J.
Acta Physica Polonica A
|
2011
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vol. 119
|
issue 6
875-879
EN
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 10^{19} cm^{-3} was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
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