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1

Anomalous Behavior of the Hall Effect in III-V Heterostructures

100%

Dziuba Z., Górska M., Marczewski J., Przesławski T., Regiński K.

Acta Physica Polonica A

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2000

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vol. 97

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issue 2

331-336

EN

The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.

2

An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

86%

Kucharski K., Zagrajek P., Tomaszewski D., Panas A., Głuszko G., Marczewski J., Kopyt P.

Acta Physica Polonica A

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2016

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vol. 130

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issue 5

1193-1195

EN

Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.

3

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

73%

Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.

Acta Physica Polonica A

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1995

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vol. 88

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issue 4

775-778

EN

The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.

4

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

73%

Videlier H., Dyakonova N., Teppe F., Consejo C., Chenaud B., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

927-929

EN

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

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4 Acta Physica Polonica A

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2 Tomaszewski D.

1 Adamczewska J.

1 Bugajski M.

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1 Dyakonova N.

1 Dziuba Z.

1 Grabiec P.

1 Górska M.

1 Głuszko G.

1 Kaniewska M.

1 Kaniewski J.

1 Knap W.

1 Kopyt P.

1 Kucharski K.

1 Lusakowski J.

1 Mizera E.

1 Muszalski J.

1 Ornoch L.

1 Panas A.

1 Przesławski T.

1 Teppe F.

1 Videlier H.

1 Zagrajek P.

Anomalous Behavior of the Hall Effect in III-V Heterostructures

An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect