Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Properties of~Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

100%
Mohamed S., Raaif M., Abd El-Rahman A., Shaaban E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 3
552-557
EN
Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.
2
Content available remote

Structural and Optical Properties of Nanostructured Fe-Doped SnO₂

100%
Saleh S., Ibrahim A., Mohamed S.
Acta Physica Polonica A
|
2016
|
vol. 129
|
issue 6
1220-1225
EN
Nanocrystalline Sn_{1-x}Fe_xO₂ (where x = 0, 0.01, 0.02, 0.03 and 0.04) powders have been successfully synthesized by the hydrothermal method followed by sintering at 1000°C for 3 h. The morphology and structure of the samples have been analyzed by field emission scanning electron microscope and X-ray diffraction, respectively. X-ray diffraction results revealed that all diffraction peaks positions agree well with the reflection of a tetragonal rutile structure of SnO₂ phase without extra peaks. The formation of a tetragonal rutile structure of SnO₂ nanostructures was further supported by the Raman spectra. The band gap of Fe-doped SnO₂ nanoparticles was estimated from the diffuse reflectance spectra using the Kubelka-Munk function and it was decreasing slightly with the increase of Fe ion concentration from 3.59 to 3.52 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. The presence of chemical bonding was confirmed by the Fourier transform infrared spectra.
3
Content available remote

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

100%
Mohamed S., El-Hossary F., Gamal G., Kahlid M.
|
EN
Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the resistivity, and the optical band gap decrease with increasing the film thickness while the refractive index increases. The present indium tin oxide films are amorphous, transparent and have relatively low resistivity. These properties are suitable as transparent electrode for organic light-emitting diodes, touch screens, and in piezoelectric applications.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.