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Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy

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Zubiaga A., Tuomisto F., Zúñiga-Pérez J., Muñoz-San José V.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1257-1264
EN
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 10^{17} cm^{-3} to low 10^{17} cm^{-3}) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×10^{17} cm^{-3} in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
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Observation of Vacancies in Ga_{1-x}Mn_xAs with Positron Annihilation Spectroscopy

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Tuomisto F., Slotte J., Saarinen K., Sadowski J.
Acta Physica Polonica A
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2003
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vol. 103
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issue 6
601-606
EN
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As_2 partial pressure.
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