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Doping Dependence of Spin Dynamics of Drifting Electrons in GaAs Bulks

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Spezia S., Persano Adorno D., Pizzolato N., Spagnolo B.

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} ÷ 5 × 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 ÷ 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.

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1 Acta Physica Polonica A

1 2011

1 Persano Adorno D.

1 Pizzolato N.

1 Spagnolo B.

1 Spezia S.

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Doping Dependence of Spin Dynamics of Drifting Electrons in GaAs Bulks