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1

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

100%

Aninkevičius V., Liberis J., Matulionis A., Matulionienė I.

Acta Physica Polonica A

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2005

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vol. 107

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issue 2

304-309

EN

Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.7} Ga_{0.3}As/In_{0.52}Al_{0.48}As two-dimensional electron gas channel (n_{2D}=2.3×10^{12} cm^{-2}). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.

2

Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

100%

Matulionis A., Liberis J., Matulionienė I., Ramonas M.

Acta Physica Polonica A

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2008

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vol. 113

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issue 3

967-970

EN

The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.

3

Hot-Electron Transport and Microwave Noise in 4H-SiC

88%

Ardaravičius L., Liberis J., Kiprijanovič O., Matulionienė I., Matulionis A.

Acta Physica Polonica A

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2005

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vol. 107

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issue 2

310-314

EN

Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n=2×10^{17} cm^{-3}) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.

4

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

64%

Matulionis A., Liberis J., Matulionienė I., Šermukšnis E., Leach J., Wu M., Ni X., Morkoç H.

Acta Physica Polonica A

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2011

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vol. 119

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issue 2

225-227

EN

Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.

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4 Acta Physica Polonica A

1 2011

1 2008

2 2005

4 Liberis J.

4 Matulionienė I.

4 Matulionis A.

1 Aninkevičius V.

1 Ardaravičius L.

1 Kiprijanovič O.

1 Leach J.

1 Morkoç H.

1 Ni X.

1 Ramonas M.

1 Wu M.

1 Šermukšnis E.

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

Hot-Electron Transport and Microwave Noise in 4H-SiC

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay