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1
Content available remote

Investigation of Phosphorus Release during Annealing of Au Contacts to InP

100%
Piotrowska A., Kamińska E., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
849-852
EN
The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
2
Content available remote

Mechanism of Thermal Interaction of In with GaAs

100%
Barcz A., Adamczewska J., Baranowski J., Kwiatkowski S.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
801-803
EN
General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.
3
Content available remote

X-ray Standing Waves and Rutherford backscattering Studies of the Structure of Si Single Crystals Implanted with Fe Ions

88%
Vartanyantz I., Auleytner J., Nowicki L., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1996
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vol. 89
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issue 5-6
625-633
EN
The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structure of silicon single crystals implanted with 80 keV Fe ions. Both methods were used for the determination of crystal damage and lattice location of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe substitution fraction was determined. The depth profiles of implanted atoms were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice location of implanted atoms is discussed.
4
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Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts

76%
Kamińska E., Piotrowska A., Żarecka R., Barcz A., Mizera E., Kwiatkowski S.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
853-856
EN
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
5
Content available remote

Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

76%
Piotrowska A., Kamińska E., Guziewicz M., Adamczewska J., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
857-860
EN
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
6
Content available remote

Shallow Ohmic Contact System to n-GaAs

76%
Kamińska E., Piotrowska A., Piotrowski T., Barcz A., Guziewicz M., Adamczewska J., Kwiatkowski S.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
804-806
EN
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
7
Content available remote

Ohmic Contacts To GaN by Solid-Phase Regrowth

64%
Kamińska E., Piotrowska A., Barcz A., Ilka L., Guziewicz M., Kasjaniuk S., Dynowska E., Kwiatkowski S., Bremser M. D., Davis R. F.
Acta Physica Polonica A
|
1997
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vol. 92
|
issue 4
819-823
EN
Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
8
Content available remote

Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts

64%
Piotrowska A., Kamińska E., Piotrowski T., Kasjaniuk S., Guziewicz M., Gierlotka S., Lin X. W., Liliental-Weber Z., Washburn J., Kwiatkowski S.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 2
419-422
EN
Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decom­poses was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metalliza­tion is not a good candidate for device quality ohmic contacts to GaSb-based devices.
9
Content available remote

GaN Layers Grown by Reactive Ion Plating

64%
Żubka A., Dwiliński R., Suchanek B., Janik W., Wysmołek A., Kwiatkowski S., Kamińska M., Shaginyan L.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 5
1058-1062
EN
GaN layers grown on ceramics, sapphire or SiC substrates using reactive ion plating method are presented. In reactive ion plating method gallium from a hot source reacts on a heated substrate with nitrogen partially ionized. Rutherford backscattering technique was applied to check the composition of the samples and gallium to nitrogen ratio was found to be close to one. However, Rutherford backscattering studies showed also a remarkable amount of unintentional impurities present in the layers. The structure of GaN was determined using reflection high-energy electron diffraction. It appeared that polycrystal and monocrystal can be grown, depending on growth conditions. Absorption spectra taken on the layers grown on sapphire showed a tail of band to band absorption starting at about 370 nm. Carrier concentration was of the order of 1019-1020 cm^{-3} at room temperature and did not change much with temperature decrease. No luminescence from the layers was detected, most probably due to high concentration of impurities.
10
Content available remote

Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe

52%
Kamińska E., Piotrowska A., Guziewicz M., Gierlotka S., Papis E., Łusakowski J., Szadkowski K., Kwiatkowski S., Dietl T., Grabecki G., Jaroszyński J., Karczewski G., Zakrzewski A. K.
Acta Physica Polonica A
|
1995
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vol. 87
|
issue 2
411-414
EN
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of con­tacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
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