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EN
Transport integrals I_n(Θ_D/T) are reviewed with their applications in solid-state physics, molecular dynamics, and electron spin-lattice relaxation. Analytical approximations of I_n for n=2-8 are proposed as applicable for computer fitting procedures in the range of the variable x=Θ_D/T from 0.1 to 40. The results are applied for description of the spin-lattice relaxation data collected for Cu^{2+} ions in triglycine sulphate and are compared with relaxation data for Cu^{2+} and Mn^{2+} in (NH_4)_2Mg(SO_4)_2·6H_2O.
EN
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu^{2+}, as well as for free radical centres produced by ionising irradiation in (NH_4)_3H(SeO_4)_2 and Li(N_2H_5)SO_4 single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.
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