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Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

100%

Walukiewicz W.

Acta Physica Polonica A

1995

vol. 87

issue 1

35-46

General aspects of the electronic transport in two-dimensional and quasi-three-dimensional semiconductor systems are discussed. Contributions of different scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.

Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center

45%

Stallinga P., Walukiewicz W., Weber E. R., Becla P., Lagowski J.

Acta Physica Polonica A

1995

vol. 88

issue 5

1043-1047

A metastable electron paramagnetic resonance signal is observed in Se doped AlSb. After illumination a strong, persistent electron paramagnetic resonance signal with an isotropic g-factor of 1.949 is observed. The absence of any electron paramagnetic resonance when cooled in the dark is direct evidence for the negative-U model. The electron paramagnetic resonance arises from the effective-mass state of the defect, which is not filled at thermal equilibrium. An analysis of the lineshape reveals that the linewidth is determined by hyperfine interactions. The extend of the wave function is found to be comparable to the prediction for the effective-mass state.

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2 Acta Physica Polonica A

2 1995

2 Walukiewicz W.

1 Becla P.

1 Lagowski J.

1 Stallinga P.

1 Weber E. R.

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Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center