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On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

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Pinčík E., Kobayashi H., Takahashi M., Brunner R., Jurečka S., Rusnák J.

Open Physics

2007

vol. 5

issue 3

428-445

In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.

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1 Open Physics

1 2007

1 Brunner R.

1 Jurečka S.

1 Kobayashi H.

1 Pinčík E.

1 Rusnák J.

1 Takahashi M.

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On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution