The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the (111) and (001) planes is calculated. It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.
The interaction of spins localized within the band-inverted heterojunction with the Weyl excitations is shown to differ significantly from the usual s-d interaction. The indirect exchange interaction is long-range and anti-ferromagnetic. The magnitude of interaction decreases with the distance as R^{-3}. The effective interaction depends on the parameters of electron energy spectrum and parameters of the heterojunction as well. It consists of anisotropic Heisenberg term and of pseudodipole terms.
Theoretical studies of the deformation potentials in quantum wells and superlattices are presented. It is shown that a difference exists between the bulk deformation potentials and deformation potentials in the low dimensional structures made of narrow-gap semiconductors.
The scanning force microscope was used to scratch thin films and to write nanoscale pattern on surfaces as well as to perform nanoindentation for hardness measurements. Different thin film materials such as C_{60} films, diamond-like carbon, metals and semiconducting films have been investigated.
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
An anomaly of the in-plane conductivity is observed in the superlattices PbTe/SnTe on (001)KCl in the temperature region of 60-130 K. The anomaly is caused by a structural phase transition in SnTe layer and as a result, the transition induced formation of defects. These defects are additional scattering centres which decrease the superlattice conductivity.
A comparative study of structural and superconductive properties of semi conductor epitaxial superlattices PbTe-SnTe and PbTe-PbS grown on (001) KCl has been carried out. It has been found that the superconductivity of the PbTe-SnTe superlattices is caused by the stretching strain in the SnTe layers and it may be connected with the relative positions of L^{+}_{8} and L^{+}_{6} terms of PbTe and SnTe, respectively in the heterojunction. In contrast to the PbTe-SnTe superlattices, the superconductivity of the PbTe-PbS super lattices is found to be associated with regular misfit dislocation grids which are generated at the interfaces.
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