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1
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Fast Detection of Infrared Laser Pulses on Planar Small Area GaAs/AlGaAs Heterojunction

100%
Širmulis E., Kazlauskaitė V., Gradauskas J., Sužiedėlis A., Ašmontas S.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
851-854
EN
We report the first experimental observation of fast photovoltage in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO_2 laser pulses. This device revealed itself as a sensitive detector of millimeter waves and as a fast IR sensor operating at room temperature. Taking into account fast response of the detector and close to linear voltage-power dependence, the results are interpreted by photoemission of hot carriers over the potential barrier of the heterojunction.
2
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Photoresponse of Porous Silicon Structures to Infrared Radiation

86%
Samuolienė N., Širmulis E., Stupakova J., Gradauskas J., Zagadskij V., Šatkovskis E.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
137-139
EN
Photoresponse of silicon samples containing porous structures have been studied under the action of CO_2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
3
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Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions

86%
Gradauskas J., Širmulis E., Ašmontas S., Sužiedėlis A., Dashevsky Z., Kasiyan V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
237-240
EN
We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO_2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.
4
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Mesoscopic Structures for Microwave-THz Detection

73%
Sužied.elis A., Ašmontas S., Požela J., Kundrotas J., Širmulis E., Gradauskas J., Kozič A., Kazlauskaité V., Anbinderis T.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
803-809
EN
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
5
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Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

59%
Čechavičius B., Kavaliauskas J., Krivaitė G., Seliuta D., Širmulis E., Devenson J., Valušis G., Sherliker B., Halsall M., Steer M., Harrison P.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
328-332
EN
We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10^{10} up to 2.5×10^{12} cm^{-2}, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.
6
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Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes

59%
Valušis G., Seliuta D., Tamošiūnas V., Širmulis E., Balakauskas S., Gradauskas J., Sužiedėlis A., Ašmontas S., Anbinderis T., Narkūnas A., Papsujeva I., Lisauskas A., Roskos H., Köhler K.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
184-187
EN
We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
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