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EN
Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
EN
An algorithm for the Kramers-Kronig analysis of the reflectivity spectra, based on an anchor-window technique is presented. The high-frequency asymptote, required for the Kramers-Kronig analysis, is determined by minimizing differences between the Kramers-Kronig-deduced optical constants of a system under investigation and known optical constants measured in a small anchor-window. The algorithm is illustrated by applying it for a reconstruction of the optical conductivity σ(ω) of the fci-ZnMgRE quasicrystals in the spectral range of 0.01-6.5 eV from the experimental IR Fourier-transform reflectivity data and the experimental spectral ellipsometry VIS-UV data. The reliability of the suggested Kramers-Kronig analysis technique is confirmed by independent infrared spectral ellipsometry σ(ω) measurements for fci-ZnMgRE.
EN
We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect.
EN
Transport properties via temperature dependences of sample resistance R(T) and influence of microwave field of 10 GHz on the conductivity of the single-walled carbon nanotubes fibers are investigated. The R(T) dependences studied within 4.2-300 K can be well approximated by the Mott law for 3D variable range hopping below T=80 K and by typical law for fluctuation-induced tunnelling model within the temperature range 80-300 K. We associate the observed increase in the conductivity with microwave power by increase in hopping probability of the charge carriers between single-walled carbon nanotubes.
EN
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
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