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Diffusion Length Studies in CdMnTe by the Surface Photovoltage Method

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Płaczek-Popko E., Szaro L., Jędral L.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
187-190
EN
The surface phototovoltage method provides a nondestructive means of measuring minority carriers diffusion length and is suitable for process control applications and for material acceptance tests. Application of the method in the case of CdMnTe compounds has been studied in the present paper. The optimum measurement conditions have been investigated by studying the dependence of measured diffusion length on the experimental conditions. As the surface photovoltage method requires the exact values of absorption coefficient as a function of wavelength, α = f(λ), the dependence has been determined. The minority carrier diffusion length for the sample investigated has been found to be equal to several tenth of μm.
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