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Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

100%

Komarov F., Vlasukova L., Milchanin O., Mudryi A., Dunetz B., Wesch W., Wendler E., Karwat C.

Acta Physica Polonica A

2011

vol. 120

issue 1

87-90

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.

Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers

81%

Komarov F., Vlasukova L., Milchanin O., Greben M., Komarov A., Mudryi A., Wesch W., Wendler E., Zuk J., Kulik M., Ismailova G.

Acta Physica Polonica A

2013

vol. 123

issue 5

809-812

Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.

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2 Acta Physica Polonica A

1 2013

1 2011

2 Komarov F.

2 Milchanin O.

2 Mudryi A.

2 Vlasukova L.

2 Wendler E.

2 Wesch W.

1 Dunetz B.

1 Greben M.

1 Ismailova G.

1 Karwat C.

1 Komarov A.

1 Kulik M.

1 Zuk J.

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Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers