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1
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Transit Time of Electron Tunneling Through a Potential Barrier

100%
Figielski T.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 4
653-655
EN
The average transit time of electron tunneling through a potential barrier is newly defined and examined without using the concept of a wave packet and without solving explicitly the time dependent Schrödinger equation.
2
Publication available in full text mode
Content available

Quantum-Interference Semiconductor Devices Revisited

100%
Figielski T.
Acta Physica Polonica A
|
2001
|
vol. 99
|
issue 6
699-708
EN
First, a simple semiclassical approach has been applied to the problem of a quantum phase acquired by an electron carrying both the charge and spin, which travels in an electromagnetic field. Basic hypothetical devices whose operation relies on the quantum interference, including spin-related interference, are discussed in the following. Finally, experimental results demonstrating two-beam interference in a planar quantum dot are presented.
3
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Traversal Time through Double-Barrier Resonant Tunneling Structure

100%
Figielski T.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 3
587-589
EN
There are certain confusing statements in the literature concerning a physical time that is responsible for a high-frequency limit in operation of double-barrier resonant tunneling devices. Here, it is shown that an electron traversal time, introduced earlier by ours, exhibits no singularity on resonance and might be a good candidate for the quantity in question.
4
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Electron Emission from Extended Defects in DLTS Experiment

100%
Figielski T.
Acta Physica Polonica A
|
1991
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vol. 79
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issue 1
137-140
EN
Dislocations parallel to a Schottky junction are considered as an example of well defined extended defects, and their behaviour in DLTS experiment is examined. A possibility of electron hopping between different traps of the defect, and inter-electronic Coulomb interaction are taken into account. Thermal electron emission from the considered defects is no longer exponential with time and consequences of this fact are discussed.
5
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The Puzzle of the 0.7 Anomaly in Conductance of Quantum Point Contact Reexamined

100%
Figielski T.
|
EN
A novel approach to the solution of the long-standing problem, called 0.7 anomaly in quantum point contact, is proposed. It is based on fundamental principles of quantum mechanics and can explain all main properties of the anomaly.
6
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Energy Levels and Electrical Activity of Dislocation Electron States in GaAs

64%
Wosiński T., Figielski T.
Acta Physica Polonica A
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1993
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vol. 83
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issue 1
51-58
EN
Experimental results are presented confirming that the two energy levels in GaAs: E_{c} - 0.68 eV and E_{v} + 0.37 eV, discovered in plastically deformed crystals, belong actually to dislocations. In view of recent identification of the electron state of misfit dislocations at an InGaAs/GaAs interface, a correspondence between these levels and dislocation types has been reinterpreted. The first mentioned leve1 belongs likely to α while the second one to β dislocations of 60° (glide set) type. Such a correspondence is compatible with the observed effect of irradiation on dislocation glide motion in GaAs. It is also argued that these energy levels are involved in the phenomenon of unquenchability of the EL2 defects placed in high-stress regions near dislocations.
7
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On Electrostatic Aharonov-Bohm Effect in Solids

52%
Figielski T., Wosiński T., Morawski A., Mąkosa A.
Acta Physica Polonica A
|
1998
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vol. 94
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issue 2
305-308
EN
We analyse conditions for an appearance of the electrostatic Aharonov- Bohm interference in two systems: a single-channel quantum-wire loop and an open ballistic quantum dot. We show that in the first system the effect will be destroyed by charge fluctuations, which probably is the reason why it has not been clearly observed, while in the second system the effect is still open for exploration.
8
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Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures

52%
Figielski T., Wosiński T., Mąkosa A.
Acta Physica Polonica A
|
1996
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vol. 90
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issue 4
777-780
EN
We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.
9
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Observation of the Coulomb Blockade at 77 K in a Lattice-Mismatched GaAs/Si Heterojunction

52%
Figielski T., Wosiński T., Mąkosa A., Riesz F.
Acta Physica Polonica A
|
1997
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vol. 92
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issue 4
745-748
EN
We investigated current-voltage characteristics of a lattice-mismatched GaAs(n)/Si(p) heterojunction. For low bias voltages at 77 K it exhibits a behaviour characteristic of the Coulomb blockade. We discuss why this unexpected phenomenon can occur in the investigated structures.
10
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Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

45%
Figielski T., Mąkosa A., Wosiński T., Harness P., Singer K.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 4
817-819
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
11
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Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer

45%
Wosiński T., Figielski T., Mąkosa A., Wrotek S., Dobrowolski W.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 3
617-621
EN
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
12
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Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling

45%
Figielski T., Wosiński T., Mąkοsa A., Kaniewska M., Regiński K.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
707-710
EN
A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnel­ling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
13
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Aharonov-Bohm Effect at Misfit Dislocations in GaAsSb/GaAs Heterostructures

45%
Figielski T., Wosiński T., Mąkosa A., Dobrowolski W., Raczyńska J.
Acta Physica Polonica A
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1996
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vol. 90
|
issue 4
773-776
EN
We examined the current flowing through p^{+}-n junction of the lattice mismatched GaAs_{1-x}Sb_{x}/GaAs heterostructure in a transverse magnetic field at 1.8 K. We have found the appearance of current oscillations, periodic as a function of the magnetic field, that are due to the Aharonov-Bohm effect of holes passed around charged dislocations.
14
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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

39%
Vitusevich S., Figielski T., Mąkosa A., Wosiński T., Belyaev A., Konakova R., Kravchenko L.
Acta Physica Polonica A
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1995
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vol. 87
|
issue 2
377-380
EN
For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
15
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Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

39%
Levchenko K., Andrearczyk T., Domagala J., Wosinski T., Figielski T., Sadowski J.
|
|
vol. 126
|
issue 5
1121-1124
EN
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
16
Content available remote

Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator

39%
Figielski T., Wosiński T., Mąkosa A., Dobrowolski W., Vitusevich S., Belyaev A.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
781-784
EN
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
17
Content available remote

Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching

39%
Andrearczyk T., Wosiński T., Mąkosa A., Figielski T., Wróbel J., Sadowski J.
Acta Physica Polonica A
|
2009
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vol. 116
|
issue 5
901-903
EN
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
18
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Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices

39%
Wesela W., Wosiński T., Mąkosa A., Figielski T., Sadowski J., Terki F., Charar S.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
369-373
EN
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
19
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Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As

33%
Andrearczyk T., Wosiński T., Figielski T., Mąkosa A., Tkaczyk Z., Łusakowska E., Wróbel J., Sadowski J.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1049-1054
EN
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga_{0.92}Mn_{0.08}As layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
20
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Content available

Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As

33%
Figielski T., Wosiński T., Pelya O., Sadowski J., Morawski A., Mąkosa A., Dobrowolski W., Jagielski J., Wróbel J.
Acta Physica Polonica A
|
2003
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vol. 103
|
issue 6
525-531
EN
We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
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