Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

100%
Al-Ghamdi A., Al-Hartomy O., Gupta R., El-Tantawy F., Taskan E., Hasar H., Yakuphanoglu F.
Acta Physica Polonica A
|
2012
|
vol. 121
|
issue 3
673-677
EN
We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO_2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO_2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO_2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO_2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO_2/Si junction. The interface states of the Al/p-Si/SiO_2/DNA/Ag and Al/p-Si/SiO_2/Ag junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.