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Physics of GaAs/AlAs Superlattices

100%
Planel R., Mollot F.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 1
71-82
EN
We describe the main problems encountered in MBE growth of GaAs/AlAs superlattices and heterostructures. Then, basic features for the understanding of their electronic properties are given, in the envelope-function formalism, and some related optical experiments are reviewed.
2
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Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure

81%
Jeżewski M., Teissier R., Mollot F., Planel R.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
833-836
EN
An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.
3
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Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well

81%
Teissier R., Planel R., Mollot F.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 4
656-659
EN
We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.
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