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Formation of Porous n-A_3B_5 Compounds

100%

Šimkiene I., Kindurys A., Treideris M., Sabataityte J.

Porous layers of A_3B_5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm^2) porous layers of uniform porosity were produced by anodization process of n-type A_3B_5 semiconductors,

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

100%

Šalucha D., Šimkiene I., Sabataityte J.

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.

Formation of Iron-Containing Clusters in Silica of Predetermined Porosity

64%

Šimkiene I., Baran M., Babonas G., Bendorius R., Rėza A., Szymczak R., Aleshkevych P., Šustavičiūtė R., Tamaševičius R.

Acta Physica Polonica A

2005

vol. 107

issue 2

400-407

Iron-containing nanoparticles and clusters were formed in silica with porosity, which was predetermined by different procedures of sol-gel technology and the chemical composition of precursors. Bulk and layer-type samples of different porosity were synthesized and investigated. The morphology, magnetic, and optical properties were studied to characterize the samples and to analyze the formation of Fe-oxides. Experimental results showed that both Fe_2O_3 and Fe_3O_4 were formed in the samples and that their relative amount was dependent on preparation technology.

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3 Acta Physica Polonica A

2 2008

1 2005

3 Šimkiene I.

2 Sabataityte J.

1 Aleshkevych P.

1 Babonas G.

1 Baran M.

1 Bendorius R.

1 Kindurys A.

1 Rėza A.

1 Szymczak R.

1 Tamaševičius R.

1 Treideris M.

1 Šalucha D.

1 Šustavičiūtė R.

Search results

Formation of Porous n-A_3B_5 Compounds

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Formation of Iron-Containing Clusters in Silica of Predetermined Porosity