Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their properties are discussed.
SnO_{x} films grown on tin substrates via d.c. magnetron sputtering at different bias were studied by slow positron implantation spectroscopy. The change of substrate bias from -40 V to -140 V and its influence on the films is shown and discussed.
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