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EN
In this paper we propose a method of intercalation of layered single crystals with atoms of 3d-metals in a magnetic-field gradient. We report on structure properties of Co_{x}InSe and Co_{x}In₂Se₃ layered crystals intercalated by cobalt. It was established that ferromagnetic ordering at room temperature is observed in the intercalated crystals. The crystals are a nanocomposite material that consists of a layered matrix and arrays of Co nanoformations on the van der Waals surfaces of InSe and In₂Se₃ layers.
EN
Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.
EN
Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge_{1-x-y}Sn_xMn_yTe single crystals (x = 0.083÷0.115; y = 0.025÷0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T_C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T_f. Magnetic structure of InSe ⟨Mn⟩ 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.
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