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Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

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Guziewicz M., Jung W., Grochowski J., Borysiewicz M., Golaszewska K., Kruszka R., Baranska A., Piotrowska A., Witkowski B., Domagala J., Gryzinski M., Tyminska K., Stonert A.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-69-A-72

Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ^{137}Cs and ^{60}Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10^{16} cm^{-3} to 2.86 × 10^{16} cm^{-3} after ^{137}Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ^{60}Co source, hole concentration of the film decreases from 6.3 × 10^{16}/cm^3 to 4.1 × 10^{16}/cm^3 and to 2.9 × 10^{16}/cm^3 after successive expositions with a dose of 20 Gy.

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1 Acta Physica Polonica A

1 2011

1 Baranska A.

1 Borysiewicz M.

1 Domagala J.

1 Golaszewska K.

1 Grochowski J.

1 Gryzinski M.

1 Guziewicz M.

1 Jung W.

1 Kruszka R.

1 Piotrowska A.

1 Stonert A.

1 Tyminska K.

1 Witkowski B.

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Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry