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Fabrication and Magnetotransport Properties of Carbon Films with Embedded Metal Nanoclusters

100%
Ksenevich V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
356-360
EN
2-dimensional arrays of Co- and Pd-clusters embedded in carbon films were fabricated by means of heat-treatment method of carboxylated cellulose films after the exchange of COOH-group protons by Co- and Pd-cations. The sizes of metal clusters within range 10 nm-1μm were obtained in dependence on the heat-treatment temperature. The dependencies of the resistance on temperature and magnetic field for the samples annealed at T=700ºC and 900ºC were measured. The R(T) dependencies both for carbon films with Co- and Pd-clusters can be fitted by expression R=R_0 exp(T_0/T)^{1/n} inherent for variable-range hopping. In the whole range of investigated magnetic field and temperature magnetoresistance was negative and can be related to quantum interference in the variable range hopping transport along neighboring alternative paths.
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AC-Conductivity of Thin Polycrystalline Tin Dioxide Films

76%
Ksenevich V., Gorbachuk N., Dauzhenka T., Bashmakov I., Poklonski N., Wieck A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
146-147
EN
The electrical properties of polycrystalline tin dioxide films were investigated by impedance spectroscopy in the frequency range 100 Hz-1 MHz at temperatures 4.2 K, 77 K and 300 K. Analysis of the experimental data by means of complex nonlinear least squares method made it possible to divide the contributions of grain bulk and grain boundaries to the conductivity. It was found that at room temperature charge transport processes are mainly determined by the grain volume while at the low temperatures contribution from the grain boundaries to the impedance of the system prevails.
3
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Electrical Properties and Magnetoresistance of Nanogranular SnO_2 Films

76%
Ksenevich V., Dovzhenko T., Dorosinets V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1043-1046
EN
Magnetotransport properties of the nanogranular SnO_2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO_2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO_2 grains.
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