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Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe_2 Chain Crystals

100%
Gasanly N., Yildirim T.
Acta Physica Polonica A
|
2011
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vol. 119
|
issue 3
437-441
EN
Thermally stimulated current measurements were carried out on as-grown TlInSe_2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s^{-1}. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10^{13} and 3.4 × 10^{12} cm^{-3}) and capture cross section (4.1 × 10^{-28} and 2.9 × 10^{-26} cm^2) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
2
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Trapping Center Parameters in N-Implanted Tl_2Ga_2S_3Se Single Crystals by Thermally Stimulated Currents Measurements

81%
Yildirim T., Gasanly N., Turan R.
Acta Physica Polonica A
|
2013
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vol. 123
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issue 4
766-769
EN
As-grown Tl_2Ga_2S_3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 × 10^{16} ions/cm^2. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as 3.9 × 10^{-20} cm^2. Also the concentration of the traps was estimated to be 8.0 × 10^{11} cm^{-3}.
3
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Analysis of Thermoluminescence Glow Peaks in β-Irradiated TlGaSeS Crystals

81%
Isik M., Yildirim T., Gasanly N.
Acta Physica Polonica A
|
2016
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vol. 129
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issue 6
1165-1168
EN
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of ≈370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for the doses in the range of 0.7-457.6 Gy. Peak maximum intensity of the observed peak around 370 K showed an increase up to a certain dose and then a decrease at higher doses. This non-monotonic dose dependence was discussed under the light of a reported model in which different kinds of competition between radiative and nonradiative recombination centers during excitation or heating stages of the thermoluminescence process are explained.
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