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Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN

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Matulionis A., Liberis J., Eastman L., Schaff W., Shealy J., Chen X., Sun Y.

Acta Physica Polonica A

2005

vol. 107

issue 2

361-364

Microwave noise temperature, current, and dissipated power were investigated at room temperature in undoped AlGaN/AlN/GaN channels grown by molecular beam epitaxy and metal-organic compound vapour decomposition techniques. Samples with essentially the same electron density (1×10^{13} cm^{-2}) and low-field mobility (1150 cm^2/(V s)) demonstrated considerably different behaviour at high electric fields. The effective hot-phonon lifetime, 300 fs and 1000 fs, respectively, was estimated for molecular beam epitaxy and metal-organic compound vapour decomposition samples. The expected anti-correlation of hot-phonon lifetime and hot-electron drift velocity was confirmed experimentally.

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1 Acta Physica Polonica A

1 2005

1 Chen X.

1 Eastman L.

1 Liberis J.

1 Matulionis A.

1 Schaff W.

1 Shealy J.

1 Sun Y.

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Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN