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EN
The magnetic domain structure and Raman scattering have been studied in NiO single-crystals with three different (100), (110) and (111) orientations. Twin-domain structure was observed in NiO(100) and NiO(110) single-crystals using cross-polarized optical microscopy. We found that the ratio of the two-magnon (at 1500 cm−1) to the two-phonon (2LO, at 1100 cm−1) Raman bands intensity is sensitive in a particular way to the type of the twin-domain pattern.
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Afterglow and thermoluminescence of ZrO2 nanopowders

88%
EN
A careful study of the phosphorescence afterglow and the thermoluminescence (TL) of sol-gel-prepared m-ZrO2 nanocrystalline powders in an extended temperature range −100 to 300 °C was carried out. Wavelength-resolved TL proved the existence of a single active luminescence centre in this temperature range. A TL method based on various heating rates was used to derive more reliable trap depths of 0.75, 0.95, 1.25, 1.46 and 1.66 eV whereas deconvolution methods provided somewhat lower values. The most intense room-temperature afterglows (that were easily observable beyond 1000 s) were obtained from samples annealed at 1250 and 1500 °C, and were attributed mainly to depopulation of the 1.25 eV traps.
EN
Composite material based on a TiO2 matrix doped with Sm3+ ions and co-doped with silver was investigated. Samarium ions together with nano- and micro-aggregates of silver were incorporated into the titanium alkoxide during the sol-gel process. Samarium ions were excited either directly (λ exc = 488 nm) or through the TiO2 host (λ exc = 355 nm). It was revealed that samarium fluorescence (λ exc = 488 nm) in gelled TiO2 films is enhanced by up to 20 times in the vicinity of silver inclusions. Sensitizing and plasmonic mechanisms of enhancement in Sm3+ fluorescence are discussed.
4
64%
EN
The Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.
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