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1

Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum

100%

Datsenko L. I., Khrupa V. I.

Acta Physica Polonica A

|

1994

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vol. 86

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issue 4

579-584

EN

Determination of the integral characteristics of structural perfection of a real crystal (i.e. Debye-Waller's static factor e^{-L} and coefficient of absorption lids due to diffuse scattering) is especially expedient using the suitably selected wavelengths of the X-ray continuous spectrum by investigation of the thickness I(t), coordinate I(x) as well as amplitude I(W) dependencies of intensities at Lane or Bragg diffraction. Here W is an amplitude of weak ultrasound vibrations excited in a sample for suppression of the Bragg component of reflectivity.

2

Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

71%

Datsenko L. I., Misiuk A., Härtwig J., Briginets A., Khrupa V. I.

Acta Physica Polonica A

|

1994

|

vol. 86

|

issue 4

585-590

EN

The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.

3

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

71%

Khrupa V. I., Grigoryev D. O., Skorokhod M. Y., Datsenko L. I., Bąk-Misiuk J.

Acta Physica Polonica A

|

1994

|

vol. 86

|

issue 4

591-597

EN

Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α_{1}} line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.

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3 Acta Physica Polonica A

3 1994

3 Datsenko L. I.

3 Khrupa V. I.

1 Briginets A.

1 Bąk-Misiuk J.

1 Grigoryev D. O.

1 Härtwig J.

1 Misiuk A.

1 Skorokhod M. Y.

Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum

Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation